一种基于InGaAs-InP异质结光电晶体管的结构优化方法

Optimization method for structure of InGaAs-InP-based heterojunction photoelectric transistor

Abstract

The invention discloses an optimization method for a structure of a InGaAs-InP-based heterojunction photoelectric transistor. The method comprises: according to the actual structure and type of a heterojunction photoelectric transistor, an identical simulated model is established in simulation software; fitting of practical performances of the heterojunction photoelectric transistor and a simulated experiment result of the simulated model is carried out; in order to enhance optical responsibility, the high-low doping concentration of a collector, the doping concentration of a base region, and the thickness of the base region of the heterojunction photoelectric transistor are optimized on the premise that no punch-through phenomenon occurs at the base region of the heterojunction photoelectric transistor, and the thickness of an intrinsic layer between the base region and a transmitting region as well as an optimal gradient range of material doping at the base region is determined, so that an optimized structure is obtained; and the simulated model is modified into an optimized structure, a simulation experiment is carried out, a simulated experiment result is compared with the simulated experiment result before structure optimization, and effectiveness after structure optimization is verified. With the method, an optimized design of a structure is realized; concrete structural parameters are provided; and the performances are improved.
本发明公开了一种基于InGaAs‑InP异质结光电晶体管的结构优化方法,包括以下步骤:根据异质结光电晶体管的实际结构和类型在仿真软件中建立起相同的仿真模型;将该异质结光电晶体管的实际性能与该仿真模型的仿真实验结果进行拟合;以增大光响应度为目的,并以该异质结光电晶体管基区不发生穿通现象为前提,优化该异质结光电晶体管的集电极高低掺杂浓度、基区掺杂浓度和基区厚度,并确定基区与发射区之间的本征层厚度及基区材料掺杂最优渐变范围,得到优化后的结构;将该仿真模型改成优化后的结构,再进行仿真实验,把仿真实验结果与结构优化前的仿真实验结果进行比较,验证结构优化后的有效性。该方法能够对结构进行优化设计,给出确切的结构参数,提高性能。

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (3)

    Title
    JEAN-LUC POLLEUX ET AL.: "Optimization of InP-InGaAs HPT Gain:Design of an Opto-Microwave Monolithic Amplifier", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》
    朱敏,陈俊,等: "p-i-n InP/In0.53Ga0.47As/InP探测器结构优化", 《光子学报》
    邢文俊: "InGaAs-InP异质结光晶体管的器件设计与理论研究", 《南开大学硕士学位论文》

Cited By (0)

    Publication numberPublication dateAssigneeTitle