静态随机存储器

Abstract

本发明公开了一种静态随机存储器。其中,该静态随机存储器包括:第一反相器和第二反相器,第一反相器的输出端连接至第二反相器的输入端,第一反相器的输入端连接至第二反相器的输出端;第一NMOS晶体管,分别与第一反相器的输入端、第二反相器的输出端、写字线和写位线连接,用于控制写信号的选通;第二NMOS晶体管,分别与第一反相器的输出端、第二反相器的输入端、读字线和内线连接,用于控制读信号的选通。本发明解决了现有技术中的基于6T单元的SRAM的读静态噪声容限较低的技术问题,达到了提高基于6T单元的SRAM的读静态噪声容限的技术效果。
The present invention discloses a static random access memory, which comprises: a first inverter and a second inverter, wherein the output terminal of the first inverter is connected to the input terminal of the second inverter, and the input terminal of the first inverter is connected to the output terminal of the second inverter; a first NMOS transistor respectively connected to the input terminal of the first inverter, the output terminal of the second inverter, writing word lines and writing bit lines and used for controlling gating of a writing signal; and a second NMOS transistor respectively connected to the output terminal of the first inverter, the input terminal of the second inverter, reading word line and internal lines and used for controlling gating of a reading signal. According to the present invention, the technical problem that the reading static noise margin of the SRAM based on 6T unit is low in the prior art is solved, and the technical effect of improvement of the reading static noise margin of the SRAM based on 6T unit is achieved.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    CN-101079425-ANovember 28, 2007台湾积体电路制造股份有限公司Storage device
    CN-102592660-AJuly 18, 2012安徽大学一种单端操作的亚阈值存储单元电路
    CN-1199229-ANovember 18, 1998精工爱普生株式会社含有选择性预充电电路的低功率存储器

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle